The Oxford Plasmalab 100 offers reactive ion etching of up to 8" wafers with an inductively coupled plasma (ICP) using
- Cl2
- SiCl4
- H2
- CH4
- SF6
- Ar
- O2
as etch gases.
The substrate temperature can be varied from −150 °C to +400 °C. The samples composition can be analyzed by optical emission spectroscopy (OES). The etch depth can be controlled by a laser interferometer.
The Nanolab is equipped with a second plasma etching system, an SI 220, manufactured by SENTECH Instruments GmbH, that can handle
- SF6
- CF4
- Ar
- O2
as etch gases. A built-in laser interferometer can be used to control etch depths.
short comment on plasma etching (german)
Danke! Diese Video wurde vom "Medienlabor AG Medienwissenschaft/Kamera und Schnitt: Lukas Burg" im Rahmen einer Webdokumentation zum 50jährigen Bestehen der Universität Konstanz erstellt.