laser interferometer of the Plasmalab 100; Copyright: Gillian Kiliani

The Oxford Plasmalab 100 offers reactive ion etching of up to 8" wafers with an inductively coupled plasma (ICP) using

  • Cl2
  • SiCl4
  • H2
  • CH4
  • SF6
  • Ar
  • O2

as etch gases.

 The substrate temperature can be varied from −150 °C to +400 °C. The samples composition can be analyzed by optical emission spectroscopy (OES). The etch depth can be controlled by a laser interferometer.

The Nanolab is equipped with a second plasma etching system, an SI 220, manufactured by SENTECH Instruments GmbH, that can handle

  • SF6
  • CF4
  • Ar
  • O2

as etch gases. A built-in laser interferometer can be used to control etch depths.

short comment on plasma etching (german)

Credit: This video was produced by the "Medienlabor AG Medienwissenschaft/camera and cut: Lukas Burg" in the course of a web documentary for the 50 year anniversary of the University of Konstanz.